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LED illumination mechanism: The terminal voltage of the […]
LED illumination mechanism: The terminal voltage of the PN junction constitutes a certain barrier. When the forward bias voltage is applied, the barrier decreases, and the majority carriers in the P and N regions diffuse toward each other. Since the electron mobility is much larger than the hole mobility, a large amount of electrons diffuse into the P region, which constitutes a minority to the P region.
LED energy saving lamp picture
LED energy saving lamp pictures (19 photos)
Injection of carriers. These electrons recombine with the holes on the valence band, and the energy obtained during recombination is released as light energy. This is the principle of PN junction illumination.
2, LED luminous efficiency: generally referred to as the external quantum efficiency of the component, which is the product of the internal quantum efficiency of the component and the extraction efficiency of the component. The internal quantum efficiency of a component is actually the electro-optic conversion efficiency of the component itself, which is mainly related to the characteristics of the component itself (such as the energy band, defects, and impurities of the component material), the composition and structure of the component. The extraction efficiency of the component refers to the number of photons that can be measured outside the component after the photons generated inside the component are absorbed, refracted, and reflected by the component itself. Therefore, the factors concerning the extraction efficiency include the absorption of the component material itself, the geometry of the component, the refractive index difference of the component and the packaging material, and the scattering characteristics of the component structure. The product of the internal quantum efficiency of the component and the extraction efficiency of the component is the luminous effect of the entire component, which is the external quantum efficiency of the component. Early component development focused on improving its internal quantum efficiency. The main method is to improve the quality of the barrier crystal and change the structure of the barrier crystal, so that the electrical energy is not easily converted into thermal energy, thereby indirectly improving the luminous efficiency of the LED, thereby obtaining a theory of about 70%. Internal quantum efficiency, but such internal quantum efficiency is almost close to the theoretical limit. Under such circumstances, it is impossible to increase the total amount of light of the module by increasing the internal quantum efficiency of the module. Therefore, it is an important research subject to improve the extraction efficiency of the component. The main method is: the change of grain appearance - TIP structure, surface roughening technology.